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APA Citation
Mbarek, S., Fouquet, F., Dherbecourt, P., Masmoudi, M., & Latry, O. (2016). gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectronics and reliability, 64, 415–418. http://access.bl.uk/ark:/81055/vdc_100038472186.0x000035