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APA Citation
Rossetto, I., Meneghini, M., Rizzato, V., Ruzzarin, M., Favaron, A., Stoffels, S., Van Hove, M., Posthuma, N., Wu, T., Marcon, D., Decoutere, S., Meneghesso, G., & Zanoni, E. (2016). study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectronics and reliability, 64, 547–551. http://access.bl.uk/ark:/81055/vdc_100038472186.0x00001b