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HARVARD Citation
Ghosh, S. et al. (2016). Study of process induced variability of germanium-pTFET in analog and RF domain. Microelectronics and reliability. pp. 47-54. [Online].
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Ghosh, S. et al. (2016). Study of process induced variability of germanium-pTFET in analog and RF domain. Microelectronics and reliability. pp. 47-54. [Online].