High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance. Issue 39 (26th September 2016)

• Record Type: Journal Article
• Authors: Kim, S.-Y.; Kim, K.; Hwang, Y. H.; Park, J.; Jang, J.; Nam, Y.; Kang, Y.; Kim, M.; Park, H. J.; Lee, Z.; Choi, J.; Kim, Y.; Jeong, S.; Bae, B.-S.; Park, J.-U.
• Is Part Of: Nanoscale. Volume 8:Issue 39(2016)
• Page Start: 17113
• Page End: 17121
• Publication Date: 2016-09-26
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c6nr05577j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Electrohydrodynamic inkjet (e-jet) printing technology enables fabrication of high-resolution, superb performance transistors ( μ = ∼230 cm 2 V −1 s −1 ) and stretchable electronics. Abstract : As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm 2 V −1 s −1 ). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2 O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.