High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance. Issue 39 (26th September 2016) - Kim, S.-Y.
Abstract : Electrohydrodynamic inkjet (e-jet) printing technology enables fabrication of high-resolution, superb performance transistors ( μ = ∼230 cm 2 V −1 s −1 ) and stretchable electronics. Abstract : As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm 2 V −1 s −1 ). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2 O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.