The physical properties of nickel doped indium oxide thin film prepared by the sol-gel method and its potential as a humidity sensor. (October 2016)

• Record Type: Journal Article
• Authors: Ibrahim, N.B.; Arsad, A.Z.; Yusop, Noratiqah; Baqiah, H.
• Is Part Of: Materials science in semiconductor processing. Volume 53(2016:Oct.)
• Page Start: 72
• Page End: 78
• Publication Date: 2016-10
• Subjects: Sensor -- Spin coating -- Magnet; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.05.020
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Ni doped In2 O3 (Nix In2−x O3 : x=0.00, 0.02, 0.04, 0.06, 0.08 and 0.10) films have been successfully prepared by a sol-gel method. All films have nanograins, cubic structures and single phase. The Ni unsystematically affected the film thickness and surface roughness. All films showed high transmission percentage i.e. in the range of 92–99% at wavelength more than 380 nm. All films except film with x=0.02 and 0.06 have magnetic properties. It is also found that all of the films were sensitive towards the humidity changes and can be used as a humidity sensor.