Cite
HARVARD Citation
Li, X. et al. (2016). Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation. Advanced materials. 28 (37), pp. 8240-8247. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, X. et al. (2016). Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation. Advanced materials. 28 (37), pp. 8240-8247. [Online].