Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation. Issue 37 (6th July 2016)

• Record Type: Journal Article
• Authors: Li, Xufan; Lin, Ming‐Wei; Basile, Leonardo; Hus, Saban M.; Puretzky, Alexander A.; Lee, Jaekwang; Kuo, Yen‐Chien; Chang, Lo‐Yueh; Wang, Kai; Idrobo, Juan C.; Li, An‐Ping; Chen, Chia‐Hao; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai
• Is Part Of: Advanced materials. Volume 28:Issue 37(2016)
• Page Start: 8240
• Page End: 8247
• Publication Date: 2016-07-06
• Subjects: alloys -- carrier type modulation -- isoelectronic -- Mo1‐xWxSe2 -- p−n homojunctions; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601991
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Carrier‐type modulation is demonstrated in 2D transition metal dichalcogenides as n‐type monolayer MoSe2 is converted to nondegenerate p‐type monolayer Mo1− x W x Se2 through isoelectronic doping. Although the alloys are mesoscopically uniform, the p‐type conduction in monolayer Mo1− x W x Se2 appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W‐rich" regions in the lattice.