Cite
MLA Citation
Jin-Feng 锦锋 Feng 冯 et al.. “Oxygen Scavenging Effect of LaLuO3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors*Supported by the National Natural Science Foundation of China under Grant No 61306126..” Chinese physics letters, vol. 33, n.d., p. . http://access.bl.uk/ark:/81055/vdc_100036337848.0x000024