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APA Citation
Koné, S., Cayrel, F., Yvon, A., Collard, E., & Alquier, D. (n.d.). dLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes. Physica status solidi, 213(9), 2364–2370. http://access.bl.uk/ark:/81055/vdc_100036425004.0x000025