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HARVARD Citation
Koné, S. et al. (n.d.). DLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes. Physica status solidi. 213 (9), pp. 2364-2370. [Online].
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Koné, S. et al. (n.d.). DLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes. Physica status solidi. 213 (9), pp. 2364-2370. [Online].