Modelling and simulation of tri-material gate stack gate all-around (TMGSGAA) MOSFET using Legendre Wavelets for analog/RF applications. (September 2016)

• Record Type: Journal Article
• Authors: Ramesh, R.; Bhattacharyya, A.
• Is Part Of: Superlattices and microstructures. Volume 97(2016)
• Page Start: 575
• Page End: 585
• Publication Date: 2016-09
• Subjects: Gate engineering -- RF analysis -- Legendre Wavelets -- Quantum mechanical effects; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.07.029
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this work, a 2D modelling of tri-material gate stack gate all around (TMGSGAA) MOSFET considering quantum mechanical effects is developed and its analog/RF characteristics are simulated. A self-consistent solution of 2D Poisson-Schrödinger equation has been obtained using Legendre Wavelets. It provides accurate results by performing efficient computation using adaptive mesh obtained by multiresolution approach. The accuracy of the method has been verified with TCAD simulation results. A systematic, quantitative investigation of main figure of merit (FOMs) for the device is carried out to demonstrate its improved RF/analog performance. The results show an improvement in drain current, Ion /Ioff ratio, transconductance, fT and fmax providing superior RF performance under low-power operating conditions. Highlights: Legendre Wavelets is used for modelling and simulation of the device. More accurate model with results very close to TCAD simulation. Significant improvement in RF FOMs for this device.