Cite
HARVARD Citation
Guan, X. et al. (2016). GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Nanoscale. 8 (34), pp. 15637-15644. [Online].
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Guan, X. et al. (2016). GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Nanoscale. 8 (34), pp. 15637-15644. [Online].