GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Issue 34 (11th August 2016)

• Record Type: Journal Article
• Authors: Guan, X.; Becdelievre, J.; Benali, A.; Botella, C.; Grenet, G.; Regreny, P.; Chauvin, N.; Blanchard, N. P.; Jaurand, X.; Saint-Girons, G.; Bachelet, R.; Gendry, M.; Penuelas, J.
• Is Part Of: Nanoscale. Volume 8:Issue 34(2016)
• Page Start: 15637
• Page End: 15644
• Publication Date: 2016-08-11
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c6nr04817j
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The reversible As-capping method can avoid the surface oxidation of core nanowires and facilitate the subsequent epitaxial shell growth. Abstract : We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping–decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped–decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.