Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology. (October 2016)

• Record Type: Journal Article
• Authors: Lin, Chun-Yu; Chiu, Yan-Lian
• Is Part Of: Solid-state electronics. Volume 124(2016)
• Page Start: 28
• Page End: 34
• Publication Date: 2016-10
• Subjects: Electrostatic discharge (ESD) -- Output driver -- Silicon-controlled rectifier (SCR); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.07.029
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × V DD -tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with V DD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × V DD . The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × V DD -tolerant stacked-device output driver to improve its ESD robustness.