Fabrication and electrical characterization of Al/p-ZnIn2Se4 thin film Schottky diode structure. (1st November 2016)

• Record Type: Journal Article
• Authors: Dhruv, D.K.; Patel, B.H.
• Is Part Of: Materials science in semiconductor processing. Volume 54(2016:Nov.)
• Page Start: 29
• Page End: 35
• Publication Date: 2016-11-01
• Subjects: Flash evaporation -- Al/p-ZnIn2Se4 Schottky diode -- I-V and C-V characteristics -- Schottky barrier height (SBH) -- Energy band diagram; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.06.012
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Polycrystalline thin films of ternary ZnIn2 Se4 compound with p-type conductivity were deposited on a pre-deposited aluminium ( Al ) film by a flash evaporation technique. A Schottky diode comprising of Al/p-ZnIn2 Se4 structure was fabricated and characterized in the temperature range 303–323 K in dark condition. The Schottky diode was subjected to current ( I )-voltage ( V ) and capacitance ( C )-voltage ( V ) characterization. The Al/p-ZnIn2 Se4 Schottky diode showed behaviour typical of a p-n junction diode. The devices showed very good diode behaviour with the rectification ratio of about 10 5 at 1.0 V in dark. The Schottky diode ideality factor, barrier height, carrier concentration, etc. were derived from I-V and C-V measurements. At lower applied voltages ( V ≤0.5 V), the electrical conduction was found to take place by thermionic emission ( TE ) whereas at higher voltages ( V >0.5 V), a space charge limited conduction mechanism ( SCLC ) was observed. An energy band diagram was constructed for fabricated Al/p-ZnIn2 Se4 Schottky diode.