Cite
APA Citation
Kolkovsky, V., Stübner, R., Langa, S., Wende, U., Kaiser, B., Conrad, H., & Schenk, H. (2016). influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique. Solid-state electronics, 123, 89–95. http://access.bl.uk/ark:/81055/vdc_100034090904.0x00001d