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HARVARD Citation
Kolkovsky, V. et al. (2016). Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique. Solid-state electronics. pp. 89-95. [Online].
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Kolkovsky, V. et al. (2016). Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique. Solid-state electronics. pp. 89-95. [Online].