Insertion behavior of sodium and potassium ions into thin CVD‐SiOx layers by means of a triangular voltage sweep method. (28th March 2016)

• Record Type: Journal Article
• Authors: Gruber, S.; Krivec, S.; Pobegen, G.; Schwab, S.; Hutter, H.
• Other Names: Abel Marie‐Laure guestEditor.; Yubero Francesco guestEditor.; Watts John F. guestEditor.
• Is Part Of: Surface and interface analysis. Volume 48:Number 7(2016)
• Page Start: 636
• Page End: 649
• Publication Date: 2016-03-28
• Subjects: mobile ions -- triangular voltage sweep -- silicon oxide -- potassium -- sodium; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.5974
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : The behavior of Na + and K + migration upon insertion from a polymeric host matrix into different SiOx layers deposited by chemical vapor deposition is investigated via triangular voltage sweep (TVS) measurements. It is indicated that the quality of the oxide, covering a highly doped silicon substrate, has a major influence on the applied bias for transferring ions into and through the insulator. The investigations show the impeding effect of ion insertion as a result of different SiOx qualities. Comparison of the calculated ion dose from TVS and time of flight secondary ion mass spectrometry depth profiling data reveals quantitative capture of the inserted ion species at the SiOx /Si interface. Furthermore, insight into the ion mobility and the reversibility of the migration effect is given by the inversion of the sweep polarity during TVS. Copyright © 2016 John Wiley & Sons, Ltd.