A Study of Ta-Si-N/Ti Bilayer Diffusion Barrier for Copper/Silicon Contact Systems. Issue 8 (10th June 2016)

• Record Type: Journal Article
• Authors: Ding, Minghui; Zheng, Hang; Wang, Li; Zhang, Hongsen
• Is Part Of: Materials and manufacturing processes. Volume 31:Issue 8(2016)
• Page Start: 1009
• Page End: 1013
• Publication Date: 2016-06-10
• Subjects: Barrier -- Bilayer -- Copper -- Diffusion -- Interconnection -- Resistance -- Sputtering -- Thermal stability; Manufacturing processes -- Periodicals; Materials -- Periodicals; Manufactured Materials; 670.5
• DOI: 10.1080/10426914.2015.1004711
• Languages: English
• ISSNs: 1042-6914

Abstract

Abstract : Ta-Si-N (10 nm)/Ti (20 nm) bilayer film has been designed with the purpose of using as diffusion barrier in copper interconnection. Ta-Si-N/Ti bilayer diffusion barriers were deposited on the substrate of n-type (100) silicon wafer using radio-frequency (RF) magnetron sputtering, followed by in situ deposition of copper. To investigate the thermal stability of the Ta-Si-N/Ti diffusion barriers, annealing was subsequently conducted in N2 gas for 60 min and annealing temperatures were chosen at 600°C, 650°C, 700°C, 750°C, and 800°C. X-ray diffraction (XRD) revealed that Ta-Si-N layer grown on the Ti layer exhibited an amorphous phase. The results indicated that Ta-Si-N/Ti film can prevent copper diffusion at 750°C. After annealing at 750°C, the production of Ti-Si layer can effectively decrease contact resistance between barrier and silicon.