Cite
HARVARD Citation
Saad, S. et al. (2016). A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications. IETE journal of research. 62 (2), pp. 265-273. [Online].
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Saad, S. et al. (2016). A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications. IETE journal of research. 62 (2), pp. 265-273. [Online].