A New Low-power, High-Q, Wide Tunable CMOS Active Inductor for RF Applications. Issue 2 (3rd March 2016)

• Record Type: Journal Article
• Authors: Saad, Sehmi; Mhiri, Mongia; Hammadi, Aymen Ben; Besbes, Kamel
• Is Part Of: IETE journal of research. Volume 62:Issue 2(2016)
• Page Start: 265
• Page End: 273
• Publication Date: 2016-03-03
• Subjects: Active inductor -- CMOS -- feedback resistor -- gyrator-C -- Q-factor -- RF communications; Electronics -- Periodicals; Telecommunication -- Periodicals; Electronics; Telecommunication; Periodicals; 621.38
• DOI: 10.1080/03772063.2015.1117952
• Languages: English
• ISSNs: 0377-2063

Abstract

ABSTRACT: This paper presents a new topology for realizing a single-ended inductor employing a minimum number of passive components. The active inductor achieves a high quality factor of 895 over a frequency range of 1700 MHz. Its self-resonance frequency is 5.5 GHz. The achieved range of sweep for inductance ( L ) varies from 3.55 to 26 nH. The circuit draws 0.5 mA current from 1.0-V supply and occupies an effective active area of 22 × 27.5 µm 2, while the noise voltage is less than . The proposed inductor is designed and simulated in a 90-nm TSMC MS/RF CMOS process.