Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices. Issue 19 (28th April 2016)

• Record Type: Journal Article
• Authors: Hartmann, C.; Wollweber, J.; Sintonen, S.; Dittmar, A.; Kirste, L.; Kollowa, S.; Irmscher, K.; Bickermann, M.
• Is Part Of: CrystEngComm. Volume 18:Issue 19(2016)
• Page Start: 3488
• Page End: 3497
• Publication Date: 2016-04-28
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c6ce00622a
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN crystals are evaluated with regard to significantly increased deep UV transparency, while maintaining the high structural quality of the AlN crystals which are grown on N-polar c-facets. Abstract : In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN crystals are evaluated with regard to significantly increased deep UV transparency, while maintaining the high structural quality of the AlN crystals which are grown on N-polar c-facets. We show that carbon concentration [C], oxygen concentration [O], and the ratio between both concentrations [C]/[O] have a significant influence on the deep UV transparency. At 3[C] < [O] with [C] + [O] < 10 19 cm −3, deep UV transparent AlN single crystals with absorption coefficients at around 265 nm ( α 265nm ) smaller than 15 cm −1 can be prepared. These conditions can be achieved in the N-polar grown volume parts of the AlN crystals using growth temperatures in the range of T G = 2030–2050 °C and tungsten and tantalum carbide as getter materials for carbon and oxygen, respectively. Deep UV transparent AlN substrates ( α 265nm < 30 cm −1 ) ≥10 mm in diameter and of high crystalline perfection (rocking curve FWHM < 15 arcsec) are shown for the first time.