Cite
HARVARD Citation
Maity, N. et al. (2016). A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices. Superlattices and microstructures. pp. 24-32. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Maity, N. et al. (2016). A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices. Superlattices and microstructures. pp. 24-32. [Online].