Design and optimization of LDMOS-SCR devices with improved ESD protection performance. (June 2016)

• Record Type: Journal Article
• Authors: Liang, Hailian; Cao, Huafeng; Gu, Xiaofeng; Guo, Zixiang
• Is Part Of: Microelectronics and reliability. Volume 61(2016)
• Page Start: 115
• Page End: 119
• Publication Date: 2016-06
• Subjects: Electrostatic discharge (ESD) -- Lateral diffusion metal-oxide semiconductor embedded silicon controlled rectifier (LDMOS-SCR) -- Optimization; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.02.001
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The lateral diffusion metal-oxide semiconductor embedded silicon controlled rectifier (LDMOS-SCR) devices with optimized structures and layouts for improving the electrostatic discharge (ESD) protection ability have been proposed. The devices are designed and fabricated in 0.25-μm, 0.35-μm and 0.5-μm Bipolar-CMOS-DMOS processes. Firstly, by designing an appropriate stripe resistance in series with the source of the LDMOS-SCR, the holding voltage of the proposed high resistance LDMOS-SCR (HRLDMOS-SCR) increases. Secondly, by inserting a floating Zener-diode into the LDMOS-SCR, the trigger voltage of the modified Zener-diode triggered LDMOS-SCR (ZTLDMOS-SCR) decreases. Finally, the ZTLDMOS-SCR is further optimized by using a ring layout and incorporating a square source resistance, resulting in a significantly improved figure of merit in comparison to traditional LDMOS-SCR devices. The optimized ZTLDMOS-SCR devices are very attractive for constructing effective and latch-up immune high voltage ESD protection solutions in power integrated circuits. Highlights: A series of structures and layouts of LDMOS-SCR devices has been designed and optimized. ESD characteristics of LDMOS-SCR with optimized structure and layouts have been investigated. The Zenertriggered LDMOS-SCR using a ring layout and incorporating the source resistance has the best ESD protection performance.