Impact of temperature on linearity and harmonic distortion characteristics of underlapped FinFET. (June 2016)

• Record Type: Journal Article
• Authors: Dutta, Arka; Koley, Kalyan; Saha, Samar K.; Sarkar, Chandan K.
• Is Part Of: Microelectronics and reliability. Volume 61(2016)
• Page Start: 99
• Page End: 105
• Publication Date: 2016-06
• Subjects: Asymmetric Underlap DG FET -- High temperature -- Harmonic distortion -- Linearity; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2016.01.017
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, the performance of asymmetric underlapped FinFETs (U-FinFETs) is analyzed for linearity and harmonic distortion at high temperatures. The harmonic distortion that arises as a result of non-linear device characteristics requires a detailed analysis for better RF reliability performance. The variations in linearity and distortion characteristics with temperature are analyzed with regards to the primary components of harmonic distortion, second order distortion ( HD2 ), third order distortion ( HD3 ), and the total harmonic distortion ( THD ). For detailed understanding of the distortion characteristics of U-FinFETs, different device parameters such as the drain current ( I ds ) and transconductance ( g m ) are also analyzed. The results of the analysis suggest that the U-FinFETs present a significant reduction in harmonic distortion at elevated temperatures under subthreshold regime and restrict the degradation in harmonic distortion in the superthreshold regime resulting in better reliability for RF applications. Highlights: Harmonic distortion in asymmetric underlap DG-MOSFET Effects of high temperature on harmonic distortion (HD) characteristics of asymmetric underlap DG-MOSFET Effects of high temperature on HD of circuits