Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film. Issue 5 (May 2015)

• Record Type: Journal Article
• Authors: de Pablos-Martín, A.; Tismer, S.; Höche, Th.
• Is Part Of: Journal of materials science & technology. Volume 31:Issue 5(2015:May)
• Page Start: 484
• Page End: 488
• Publication Date: 2015-05
• Subjects: Laser welding -- Absorbing film -- Sapphire wafer bonding; Metals -- Periodicals; Materials science -- Periodicals; Materials science; Metals; Periodicals; 620.1105
• DOI: 10.1016/j.jmst.2014.12.007
• Languages: English
• ISSNs: 1005-0302

Abstract

Abstract : Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium. Upon laser irradiation, aluminum from the upper substrate is incorporated into the thin film, forming Ti–Al–O compounds. While the irradiated region becomes transparent, the bond quality was evaluated by scanning acoustic microscopy.