Cite
MLA Citation
Peng Xiao et al.. “High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer.” Physica status solidi, vol. 10, no. 6, 2016, pp. 493–497. http://access.bl.uk/ark:/81055/vdc_100033242885.0x00000d