Cite
HARVARD Citation
Xiao, P. et al. (2016). High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer. Physica status solidi. 10 (6), pp. 493-497. [Online].
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Xiao, P. et al. (2016). High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer. Physica status solidi. 10 (6), pp. 493-497. [Online].