Cite
HARVARD Citation
Li, X. et al. (2016). P‐191L: Late‐News Poster: Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide. Digest of technical papers. 47 (1), pp. 1221-1224. [Online].
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Li, X. et al. (2016). P‐191L: Late‐News Poster: Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide. Digest of technical papers. 47 (1), pp. 1221-1224. [Online].