P‐191L: Late‐News Poster: Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide. Issue 1 (May 2016)
- Record Type:
- Journal Article
- Title:
- P‐191L: Late‐News Poster: Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide. Issue 1 (May 2016)
- Main Title:
- P‐191L: Late‐News Poster: Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide
- Authors:
- Li, Xiuling
Lin, Tengda
Shin, Jiyeong
Jang, Jin - Abstract:
- Abstract : Performance of solution processed p‐channel oxide TFTs are improved by introducing metal‐doping in nickel oxide (NiOx ). On/off current ratio of 5 × 10 4 and field‐effect mobility (µFE ) of ∼0.67 cm 2 /V·s are achieved in the fabricated devices, making it promising for future power efficient oxide circuits and complementary oxide electronics.
- Is Part Of:
- Digest of technical papers. Volume 47:Issue 1(2016)
- Journal:
- Digest of technical papers
- Issue:
- Volume 47:Issue 1(2016)
- Issue Display:
- Volume 47, Issue 1 (2016)
- Year:
- 2016
- Volume:
- 47
- Issue:
- 1
- Issue Sort Value:
- 2016-0047-0001-0000
- Page Start:
- 1221
- Page End:
- 1224
- Publication Date:
- 2016-05
- Subjects:
- Metal doping -- nickel oxide (NiOx) -- p-channel -- thin film transistor (TFT)
Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/sdtp.10845 ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 1699.xml