300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology. (June 2016)

• Record Type: Journal Article
• Authors: Zhang, Shuai; Tuan, Hsiao-Chin; Wu, Xiao-Jing; Shi, Lei; Wu, Jian
• Is Part Of: Microelectronics and reliability. Volume 61(2016)
• Page Start: 125
• Page End: 128
• Publication Date: 2016-06
• Subjects: LDMOS -- DTI -- SOI -- Power; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.11.004
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: A SOI platform is developed for a LDMOS transistor from 70 V to 300 V. It is one of the best cases covering the wide voltage range. By applying novel DTI technology, the pitch of a single LDMOS transistor cell is reduced. Thin silicon and oxide film help to reduce the process complexity and the cost of SOI wafer. The platform is compatible with standard CMOS technology, and is appreciable for broad power IC products. Highlights: The SOI platform covered wide voltage range and better performance from 70 V to 300 V. The platform is compatible with standard CMOS technology. Proposed DTI structure shows larger BV capability. 300 V nLDMOS shows large enough SOA for switching applications.