Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO(110) single-crystal substrate by laser chemical vapor deposition. Issue 9 (July 2016)

• Record Type: Journal Article
• Authors: Guo, Dongyun; Ju, Yang; Ito, Akihiko; Goto, Takashi; Wang, Chuanbin; Shen, Qiang; Tu, Rong; Huang, Zhixiong; Zhang, Lianmeng
• Is Part Of: Ceramics international. Volume 42:Issue 9(2016)
• Page Start: 11464
• Page End: 11467
• Publication Date: 2016-07
• Subjects: BaTi2O5 thick films -- Laser CVD -- Laser power -- Orientation -- Morphology; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2016.03.221
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: BaTi2 O5 (BT2 ) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature ( T dep ), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at T dep =956 K had dielectric constant ( ε ′) of 67 and dielectric loss (tan δ ) of 0.015, while the (511)-oriented BT2 thick film deposited at T dep =964 K had ε ′ of 74 and tan δ of 0.019 at 300 K and 1 MHz.