Dielectric properties of BaTi2O5 thick films prepared on Pt-coated MgO(110) single-crystal substrate by laser chemical vapor deposition. Issue 9 (July 2016) - Guo, Dongyun
Abstract: BaTi2 O5 (BT2 ) films were deposited on Pt-coated MgO(110) single-crystal substrates by laser chemical vapor deposition. The single-phase BT2 thick films were deposited at high deposition rates. The BT2 thick films consisted of elongated grains with columnar cross-section. With increasing the deposition temperature ( T dep ), the orientation of BT2 thick films changed from (112) to (511), and the grain size increased. The (112)-oriented BT2 thick film deposited at T dep =956 K had dielectric constant ( ε ′) of 67 and dielectric loss (tan δ ) of 0.015, while the (511)-oriented BT2 thick film deposited at T dep =964 K had ε ′ of 74 and tan δ of 0.019 at 300 K and 1 MHz.