Low temperature Solution-Processed ZnO film on flexible substrate. (1st June 2016)

• Record Type: Journal Article
• Authors: Hong, JeongSoo; Wagata, Hajime; Katsumata, Ken-ichi; Matsushita, Nobuhiro
• Is Part Of: Materials science in semiconductor processing. Volume 47(2016:Jun.)
• Page Start: 20
• Page End: 24
• Publication Date: 2016-06-01
• Subjects: Flexible ZnO -- Solution -- PES -- Bending test; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.02.010
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Transparent conductive ZnO films were directly deposited on unseeded polyethersulfone (PES) substrates with a spin-spray method using aqueous solution at a low substrate temperature of 85 °C. All ZnO films were crystalline with wurtzite hexagonal structure and impurity phases were not detected. ZnO films deposited without citrate ions in the reaction solution had a rod array structure. In contrast, ZnO films deposited with citrate ions in the reaction solution had a continuous, dense structure. The transmittance of the ZnO films was improved from 11.9% to 85.3% as their structure changed from rod-like to continuous. After UV irradiation, the ZnO films with a continuous, dense structure had a low resistivity of 9.1×10 −3 Ω cm, high carrier concentration of 2.7×10 20 cm −3 and mobility of 2.5 cm 2 V −1 s −1 .