GaN nanowires on diamond. (15th June 2016)

• Record Type: Journal Article
• Authors: Hetzl, Martin; Schuster, Fabian; Winnerl, Andrea; Weiszer, Saskia; Stutzmann, Martin
• Is Part Of: Materials science in semiconductor processing. Volume 48(2016:Jun.)
• Page Start: 65
• Page End: 78
• Publication Date: 2016-06-15
• Subjects: Nanowires -- GaN -- Diamond -- Heteroepitaxy -- Doping -- Photoluminescence -- Electroluminescence; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.03.013
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated.