Structural, optical and transport properties of SxZnO. (15th June 2016)

• Record Type: Journal Article
• Authors: Dib, K.; Brahimi, R.; Bessekhouad, Y.; Tayebi, N.; Trari, M.
• Is Part Of: Materials science in semiconductor processing. Volume 48(2016:Jun.)
• Page Start: 52
• Page End: 59
• Publication Date: 2016-06-15
• Subjects: ZnO -- Doping process -- Optical property -- Electrical conductivity -- Thermopower; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.03.010
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this paper, S-doped ZnO (Sx ZnO) was prepared using sol-gel method at different S amounts. The structural, optical and transport properties were investigated. The introduction of S atoms into the ZnO network was found to lower the crystallization level which results in reducing the crystallite size up to x =0.3. The doping process is confirmed by the observed peak at ~610 cm −1 in the ATR spectrum related to the Zn-S linking. EDX mapping shows a homogeneous distribution of S atoms on the particles surface. The best compromise between the band gap (Eg=2.96 eV), the charge carriers (NA =2.139×10 22 cm −3 ), the conductivity (σ=5.56×10 −4 Ω −1 m −1 ) and the mobility (µ=16.26×10 −14 m 2 V −1 s −1 ) is obtained for x =0.1. The conduction mechanism is assumed by small hopping polaron. The S-doping has impacted positively the photocatalytic activity of ZnO, with particularly high performance for S0.2 ZnO.