Corrigendum to 'Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate' [Mater. Sci. Semicond. Process. 42 (2016) 283–287]. (1st June 2016)

Record Type:: Journal Article
Title:: Corrigendum to 'Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate' [Mater. Sci. Semicond. Process. 42 (2016) 283–287]. (1st June 2016)
Main Title:: Corrigendum to 'Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate' [Mater. Sci. Semicond. Process. 42 (2016) 283–287]
Authors:: Lin, Tao
Sun, Ruijuan
Sun, Hang
Guo, Enmin
Duan, Yupeng
Lin, Nan
Ma, Xiaoyu
Wang, Yonggang
Abstract:
Is Part Of:: Materials science in semiconductor processing. Volume 47(2016:Jun.)
Journal:: Materials science in semiconductor processing
Issue:: Volume 47(2016:Jun.)
Issue Display:: Volume 47 (2016)
Year:: 2016
Volume:: 47
Issue Sort Value:: 2016-0047-0000-0000
Page Start:: 86
Page End:
Publication Date:: 2016-06-01
Subjects:: Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152
Journal URLs:: http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗
DOI:: 10.1016/j.mssp.2016.03.030 ↗
Languages:: English
ISSNs:: 1369-8001
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store
Ingest File:: 42.xml