Atomistic tight-binding computations of excitonic fine structure splitting in CdSe/ZnSe type-I and ZnSe/CdSe invert type-I core/shell nanocrystals. (1st June 2016)
- Record Type:
- Journal Article
- Title:
- Atomistic tight-binding computations of excitonic fine structure splitting in CdSe/ZnSe type-I and ZnSe/CdSe invert type-I core/shell nanocrystals. (1st June 2016)
- Main Title:
- Atomistic tight-binding computations of excitonic fine structure splitting in CdSe/ZnSe type-I and ZnSe/CdSe invert type-I core/shell nanocrystals
- Authors:
- Sukkabot, Worasak
- Abstract:
- Abstract: The excitonic fine structure splitting (FSS) in semiconductor core/shell nanocrystals is intrinsically caused by electron-hole exchange interactions. Here, I present the model based on the combination of the atomistic tight-binding theory (TB) and configuration interaction description (CI) that allows determining the band-edge excitonic fine structure. Using this atomistic model, I highlight the operation of the excitonic fine structure splitting by engineering the type of the band alignments and the thickness of the growth shell in CdSe/ZnSe type-I and ZnSe/CdSe invert type-I core/shell nanocrystals, indicating to control the location of the carrier confinement in these nanostructures. To theoretically examine the atomistic behaviors of excitonic fine structure splitting, the single-particle spectra, optical band gaps, ground-state wave function overlaps, ground-state coulomb energies, ground-state exchange energies, dark-bright (DB) excitonic splitting and bright-bright (BB) excitonic splitting are computed. I discover that ZnSe/CdSe invert type-I core/shell nanocrystals provide a sturdily reduced energies of DB and DB excitonic splitting as described by a diminished electron-hole exchange interaction. Besides, the energies of DB and DB excitonic splitting are decreased with the increasing dimensions of the growth shell. This deeper insight is much important for the theoretical understanding and practical control by type of the band alignments and sizes in growthAbstract: The excitonic fine structure splitting (FSS) in semiconductor core/shell nanocrystals is intrinsically caused by electron-hole exchange interactions. Here, I present the model based on the combination of the atomistic tight-binding theory (TB) and configuration interaction description (CI) that allows determining the band-edge excitonic fine structure. Using this atomistic model, I highlight the operation of the excitonic fine structure splitting by engineering the type of the band alignments and the thickness of the growth shell in CdSe/ZnSe type-I and ZnSe/CdSe invert type-I core/shell nanocrystals, indicating to control the location of the carrier confinement in these nanostructures. To theoretically examine the atomistic behaviors of excitonic fine structure splitting, the single-particle spectra, optical band gaps, ground-state wave function overlaps, ground-state coulomb energies, ground-state exchange energies, dark-bright (DB) excitonic splitting and bright-bright (BB) excitonic splitting are computed. I discover that ZnSe/CdSe invert type-I core/shell nanocrystals provide a sturdily reduced energies of DB and DB excitonic splitting as described by a diminished electron-hole exchange interaction. Besides, the energies of DB and DB excitonic splitting are decreased with the increasing dimensions of the growth shell. This deeper insight is much important for the theoretical understanding and practical control by type of the band alignments and sizes in growth shell with the aim to generate the entanglement of the polarized photon source in the application of the quantum information processing. … (more)
- Is Part Of:
- Materials science in semiconductor processing. Volume 47(2016:Jun.)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 47(2016:Jun.)
- Issue Display:
- Volume 47 (2016)
- Year:
- 2016
- Volume:
- 47
- Issue Sort Value:
- 2016-0047-0000-0000
- Page Start:
- 57
- Page End:
- 61
- Publication Date:
- 2016-06-01
- Subjects:
- Tight-binding theory -- Fine structure splitting -- CdSe/ZnSe -- ZnSe/CdSe
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2016.02.018 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 42.xml