Effect of the deposition rate on the phase transition in silver telluride thin films. (1st June 2016)

• Record Type: Journal Article
• Authors: Gnanadurai, P.; Soundararajan, N.; Sooriamoorthy, C.E.
• Is Part Of: Materials science in semiconductor processing. Volume 47(2016:Jun.)
• Page Start: 12
• Page End: 15
• Publication Date: 2016-06-01
• Subjects: Silver telluride -- Deposition rate -- Electrical resistivity -- Phase transition; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2016.02.009
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Silver telluride thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2×10 −5 mbar. The electrical resistivity was measured in the temperature range 300–430 K. The temperature dependence of the electrical resistance of Ag2 Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed.