Cite
HARVARD Citation
Kushwah, C. et al. (2016). A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations. Microelectronics journal. pp. 75-88. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Kushwah, C. et al. (2016). A 20 nm robust single-ended boost-less 7T FinFET sub-threshold SRAM cell under process–voltage–temperature variations. Microelectronics journal. pp. 75-88. [Online].