Cite
HARVARD Citation
Wu, S. et al. (2016). A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line. Microelectronics journal. pp. 89-98. [Online].
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Wu, S. et al. (2016). A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line. Microelectronics journal. pp. 89-98. [Online].