Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region. (June 2016)

• Record Type: Journal Article
• Authors: Shin, Yong Hyeon; Yun, Ilgu
• Is Part Of: Solid-state electronics. Volume 120(2016)
• Page Start: 19
• Page End: 24
• Publication Date: 2016-06
• Subjects: Asymmetric double-gate metal-oxide-semiconductor transistor -- Silicon oxide thickness -- Flat-band voltage variation -- Analytical model -- Body doping concentration; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.03.002
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Analytical model for asymmetric lightly doped DG MOSFET. Analysis of asymmetry of both gate oxide thickness and work function. Perturbation method based 2D analytical asymmetric DG MOSFET model. Abstract: This paper proposes an analytical model for an asymmetric double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) with varying gate-oxide thickness ( tox ) and flat-band voltage ( Vfb ) in the subthreshold region. Since such variations cannot be completely avoided, the modeling of their behaviors is essential. The analytical model is developed by solving a 2D Poisson equation with a varying channel doping concentration ( NA ). To solve the 2D Poisson equation of the asymmetric DG MOSFET, a perturbation method is used to separate the solution of the channel potential into basic and perturbed terms. Since the basic terms can be regarded as the equations derived from a general symmetric doped DG MOSFET, the conventional analytical model is adopted. In addition, a solution related to the perturbed terms for the asymmetric structures is obtained using Fourier series. Based on the obtained channel potential, the electrical characteristics of the drive current ( IDS ) are expressed in the analytical model. The prediction of the electrical characteristics by the analytical model shows excellent agreement when compared with commercially available 2D numerical device simulation results with respect to not only tox and Vfb variations but also channel length and NA variations.