Degradation study of single poly radiation sensors by monitoring charge trapping. (April 2016)

• Record Type: Journal Article
• Authors: Pikhay, Evgeny; Roizin, Yakov; Nemirovsky, Yael
• Is Part Of: Microelectronics and reliability. Volume 59(2016)
• Page Start: 18
• Page End: 25
• Publication Date: 2016-04
• Subjects: X-ray detection -- Gamma-ray detection -- Semiconductor radiation detectors -- Silicon radiation detectors -- Ionizing radiation sensors -- Radiation detectors -- Floating gate; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.12.032
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Special test structures emulating the performance of C-sensor, a direct floating gate (FG) ionizing radiation sensor, were used to investigate its degradation under Gamma radiation. Original MOS transistors with bulks made of crystalline silicon and Poly allowed minimizing the number of irradiations required to study the peculiarities of charge accumulation in the dielectrics of C-sensors. Electrical characterization of the developed structures before and after the exposure to different doses of Gamma radiation was performed. The guidelines for improving sensor immunity to radiation degradation are discussed. Highlights: Novel method of radiation sensors degradation study Special MOS structures for measuring of the trapped charge Co-60 irradiation to doses up to 1000 Gy in a passive mode Physics of sensitivity to ionizing radiation Guidelines for sensor radiation hardness improvement