Catalyst-free growth of ZnO nanowires on ITO seed layer/glass by thermal evaporation method: Effects of ITO seed layer laser annealing temperature. (April 2016)

• Record Type: Journal Article
• Authors: Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.
• Is Part Of: Superlattices and microstructures. Volume 92(2016)
• Page Start: 68
• Page End: 79
• Publication Date: 2016-04
• Subjects: ZnO nanowires -- Glass substrate -- ITO seeds -- CW CO2 laser -- Thermal evaporation; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2016.01.038
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Novel catalyst-free growth of ZnO nanowires (ZnO-NWs) on ITO seeds/glass substrate by thermal evaporation method, and effects of continuous wave CO2 laser thermal annealed seed layer on the morphology and properties of ZnO-NWs growth were investigated. The effects of sputtered ITO seed layer laser annealing temperature on the morphological, structural, and optical properties of ZnO-NWs was systematically investigated at temperatures 250, 350, and 450 °C, respectively. The surface morphology and structure of the seeds and the products of ZnO-NWs were characterized in detail by using field emission scanning electron microscopy, atomic force microscopy, and X-ray diffraction. Optical properties were further examined through photoluminescence, and UV–Vis spectrophotometer. A growth mechanism was proposed on the basis of obtained results. The results showed that the nanowires were strongly dependent on the seed layer annealing temperatures, which played an important role in nucleation and dissimilar growth of the nanowires with varying sizes and geometric shapes. Highlights: The successful synthesis of ZnO-NWs on glass substrates using thermal evaporation. Use ITO thin film as seed layer assisted self catalytically growth. Controlling the growth mechanism of ZnO-NWs by using CW CO2 laser seed annealing. The intensity of the photoluminescence peaks depend on the annealing seed layer. The annealing seed layer 450 °C reduces the sample's defects.