Cite
HARVARD Citation
Xu, Y. et al. (n.d.). Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing. Materials science in semiconductor processing. pp. 23-28. [Online].
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Xu, Y. et al. (n.d.). Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing. Materials science in semiconductor processing. pp. 23-28. [Online].