Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology. (February 2016)

• Record Type: Journal Article
• Authors: Barletta, G.; Ngwan, V.C.
• Is Part Of: Microelectronics and reliability. Volume 57(2016)
• Page Start: 20
• Page End: 23
• Publication Date: 2016-02
• Subjects: IGSS leakage -- Oxide charge trapping/de-trapping -- CC-MOSFET; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.11.019
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this work we present an alternative method to evaluate the ability to charge trap of the thermal silicon oxide grown on n + -polysilicon in charge-coupled MOSFET devices. By interpreting the current conduction mechanism through the polysilicon-oxide by Frenkel–Poole model, we were able to evaluate and quantify the amount of charge trapped in it. We propose this approach as a very simple methodology to recognize the properties and quality of insulation of the thermal silicon oxide grown on n + -polysilicon devices.