Cite
MLA Citation
M.A. Villena et al.. “A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs.” Solid-state electronics, vol. 118, 2016, pp. 56–60. http://access.bl.uk/ark:/81055/vdc_100030714134.0x00004a
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M.A. Villena et al.. “A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs.” Solid-state electronics, vol. 118, 2016, pp. 56–60. http://access.bl.uk/ark:/81055/vdc_100030714134.0x00004a