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HARVARD Citation
Villena, M. et al. (2016). A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs. Solid-state electronics. pp. 56-60. [Online].
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Villena, M. et al. (2016). A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs. Solid-state electronics. pp. 56-60. [Online].