Determination of minority carrier diffusion length of sprayed-Cu2ZnSnS4 thin films. (April 2016)

• Record Type: Journal Article
• Authors: Courel, Maykel; Valencia-Resendiz, E.; Pulgarín-Agudelo, F.A.; Vigil-Galán, O.
• Is Part Of: Solid-state electronics. Volume 118(2016)
• Page Start: 1
• Page End: 3
• Publication Date: 2016-04
• Subjects: Minority carrier diffusion length -- CZTS thin films -- CZTS/CdS solar cells -- Spray pyrolysis; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.12.003
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Ln values of spray-deposited CZTS thin films are studied. Ln values as a function of CZTS compositional ratios are reported. Higher Ln values are reached for optimal CZTS compositional ratios. Non-optimal compositional ratios showed relatively low Ln values. Ln values in the range of 0.11–0.17 μm are obtained. Abstract: Despite Cu2 ZnSnS4 (CZTS) is a potential candidate for solar cell applications, so far, low efficiency values have been reported. In particular, for spray-deposited CZTS, efficiencies lower than 2% are commonly achieved. It is well known that one of the most important parameters governing solar cell performance is minority carrier diffusion length ( Ln ). In this work, CZTS thin film solar cells with different compositional ratios are fabricated in order to study its impact on Ln values. The Ln parameter is calculated for sprayed-CZTS layers using external quantum efficiency measurements in conjunction with optical absorption coefficient versus wavelength measurements – for the first time. Values in the range of 0.11–0.17 μm are obtained emphasizing the need for improving sprayed-CZTS crystalline quality.